Thin films carry more current

نویسندگان

چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Current-Voltage Relations for Electrochemical Thin Films

The dc response of an electrochemical thin film, such as the separator in a microbattery, is analyzed by solving the Poisson-Nernst-Planck equations, subject to boundary conditions appropriate for an electrolytic/galvanic cell. The model system consists of a binary electrolyte between parallel-plate electrodes, each possessing a compact Stern layer, which mediates Faradaic reactions with nonlin...

متن کامل

Electrochemical Thin Films at and above the Classical Limiting Current

We study a model electrochemical thin film at DC currents exceeding the classical diffusion-limited value. The mathematical problem involves the steady Poisson–Nernst–Planck equations for a binary electrolyte with nonlinear boundary conditions for reaction kinetics and Stern-layer capacitance, as well as an integral constraint on the number of anions. At the limiting current, we find a nested b...

متن کامل

Current oscillations observed for sparse Si nanorystal thin films

Xin Zhou, Ken Uchida, Hiroshi Mizuta , and Shunri Oda Quantum Nanoelectronics Research Center, Tokyo Institute of Technology and SORST JST (Japan Science and Technology Agency) 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan, Phone: +81-3-5734-2542, FAX: +81-3-5734-2542, e-mail: [email protected] 2 School of Electronics and Computer Science, University of Southampton, Southampton Ham...

متن کامل

Interval or moments: which carry more information?

In many practical situations, we do not have enough observations to uniquely determine the corresponding probability distribution, we only have enough observations to estimate two parameters of this distribution. In such cases, the traditional statistical approach is to estimate the mean and the standard deviation. Alternatively, we can estimate the two bounds that form the range of the corresp...

متن کامل

Structural, Electrical and Optical Properties of Molybdenum Oxide Thin Films Prepared by Post-annealing of Mo Thin Films

Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Nature

سال: 1988

ISSN: 0028-0836,1476-4687

DOI: 10.1038/334280d0